Wide bandgap materials and advanced packaging are revolutionizing power, but thermal and integration challenges persist.

Electrical measurements on vertical GaN MOSFETs revealed a current density of 330 mA mm -1 at a drain bias of 5 V, and a ...

The GaN Semiconductor Devices market is witnessing rapid expansion due to the growing need for energy-efficient and high-performance technologies. Akash Anand SNS Insider +1 415-230-0044 ...

Earlier this month, the Andhra Pradesh state government in India signed a memorandum of understanding (MoU) with Indichip ...

Companies poured billions into fabs and facilities around the world as regions continue to build self-sufficiency and form ...

The GaN wafer’s unique crystal structure is key to its dual functionality. Each side of the wafer has different properties, ...

GaN technology offers advantages over traditional silicon-based devices, including higher efficiency and faster switching speeds, EPC said.

Recently, Infineon unveiled the world’s first 300 mm power gallium nitride (GaN) wafer technology in an existing high-volume manufacturing environment – a significant step towards delivering ...

We are thrilled to receive this initial production purchase order, signaling their commitment to move forward with volume production wafer ... testing of power semiconductors like GaN and silicon ...

Detailed price information for Aehr Test Systems (AEHR-Q) from The Globe and Mail including charting and trades.