A research team has achieved multilevel spin-based modulation of magnetoresistance in high-performance organic spin valve (OSV) devices. The study was published in Advanced Materials. As a new ...

This is a simplified analogy for tunneling magnetoresistance (TMR), a quantum mechanical phenomenon that occurs in magnetic tunnel junctions (MTJs), where two ferromagnetic layers are separated by a ...

Giant magnetoresistance (GMR) is a quantum mechanical effect observed in thin film structures composed of alternating ferromagnetic and non-magnetic layers. It is characterized by a significant change ...

One technologically important property is giant magnetoresistance. The presence of an external magnetic field creates a large change in electrical resistance, which is the basis of the read-head ...

The magnetoresistance effect of MgO-based magnetic tunnel junctions (MTJ), which was originally developed by AIST and is the core technology for spintronics today, is widely used in the magnetic heads ...