High speed, large-area deposition nanofilm production possible with new technique
Traditionally, methods like chemical vapor deposition (CVD) and the Langmuir-Blodgett (LB) technique have been employed for ...
Semiconductor Engineering8 天
SRAM With Mixed Signal Logic With Noise Immunity in 3nm Nanosheet (IBM)
A new technical paper titled “SRAM and Mixed-Signal Logic With Noise Immunity in 3nm Nano-Sheet Technology” was published by researchers at IBM T. J. Watson Research Center and IBM. Abstract “A ...
来自MSN1 个月
TSMC shares deep-dive details about its cutting edge 2nm process node at IEDM 2024 — 35 ...
The vast majority of these advantages are enabled by TSMC's new gate-all-around (GAA) nanosheet transistors along with N2 NanoFlex design-technology co-optimization capability and some other ...