High speed, large-area deposition nanofilm production possible with new technique
Traditionally, methods like chemical vapor deposition (CVD) and the Langmuir-Blodgett (LB) technique have been employed for ...
Semiconductor Engineering4y
New Transistor Structures At 3nm/2nm
There are several types of GAA architectures in R&D, although vendors are focusing on one version, dubbed nanosheet FETs. Basically, a nanosheet FET is a finFET on its side with a gate wrapped around ...
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TSMC shares deep-dive details about its cutting edge 2nm process node at IEDM 2024 — 35 percent less power or 15 percent more performance
The vast majority of these advantages are enabled by TSMC's new gate-all-around (GAA) nanosheet transistors along with N2 NanoFlex design-technology co-optimization capability and some other ...
Semiconductor Engineering9d
SRAM With Mixed Signal Logic With Noise Immunity in 3nm Nanosheet (IBM)
A new technical paper titled “SRAM and Mixed-Signal Logic With Noise Immunity in 3nm Nano-Sheet Technology” was published by researchers at IBM T. J. Watson Research Center and IBM. Abstract “A ...