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New method realize ohmic contacts in n-type MoSâ‚‚ transistors at cryogenic temperaturesmainly due to the challenges in obtaining ohmic contact at very low temperatures," said Siwen Zhao, the first author of the paper. "We started working to fill this gap in the literature in early ...
Energy band diagram of Schottky contact under bias, Thermionic emission current, Ohmic contact by heavy doping in semiconductor, Ohmic contact by low metal work function, Surface states, Fermi level ...
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