In a conventional plasma etching chamber, the incident ions bombard the surface and etch holes normal to the surface; angled etching is not possible even when the surface is tilted. To overcome ...

Both capacitively (RIE) and inductively (ICP) coupled plasma etcher with fluorine-based gases (CF4, CHF3, C4F8, SF6), BCl3, nitrogen, argon, and oxygen for anisotropic dry etching of Si-based ...

Step 4) Etching products are purified from the chamber. ALE of MoS 2 shows no Raman defect peak after etching, highlighting the low damage etching capabilities of ALE. Image Credit: Oxford Instruments ...

The researchers compared results from this process to a more advanced cryo-etching process that uses hydrogen fluoride gas to create the plasma. "Cryo etch with the hydrogen fluoride plasma showed ...

Reactive Ion Etch (RIE) is a physical etch process. A rich plasma has been made just above the wafer, and the ions are expedited toward the surface to generate a highly powerful anisotropic etch.