NoMIS Power says its long SCWT devices are well-screened for latent defects and offer easier gate driver desaturation (dSat) ...

With the recent announcement by Infineon that GaN use is reaching the “tipping point” for accelerated adoption, maybe it’s ...

Maintenance cost : The life of low-reliability domestic silicon carbide MOSFET devices is only 1-2 years (the life of ...

onsemi has introduced the SPM 31 intelligent power module (IPM), its first generation of 1200V silicon carbide (SiC) metal ...

NoMIS Power's latest advancement significantly extends the SCWT of SiC MOSFETs to a minimum of 5 µs, compared to the current ...

The essence of the problem of bad money in domestic SiC silicon carbide MOSFET In order to pursue the specific on-resistance ...

making it suitable as a gate driver for SiC MOSFETs, which are highly sensitive to changes in gate voltage. TLP5814H has an ...

Today, wide bandgap technologies accounts for more than 16 percent of the global power device market, and we forecast that this will jump to more than 32 percent by 2029.

RFMW, part of Exponential Technology Group, Inc., a premier distributor of power management and RF and microwave components ...

Keysight Technologies, Inc. (NYSE: KEYS) has developed an optically isolated differential probing family dedicated to ...

Keysight Technologies, Inc. KEYS recently expanded its portfolio with the launch of a new family of optically isolated ...