An artist’s representation of a hole etched into alternating layers of silicon oxide and silicon nitride using plasma, to make 3D NAND flash memory. Researchers want to refine how they make ...
Emerging high-performance applications demand increasingly fast read throughputs from NOR-flash memory devices. At the same time, the pin-count required to implement ...
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For a while now, the industry has wondered as to when Chinese manufacturers will become serious players in the global memory industry, especially DRAM. It ...