The proposed cell is based on indium gallium phosphide (InGaP), indium gallium arsenide (InGaAs) and germanium (Ge) and has an active area of 0.25 mm2. It can be used for applications in micro ...

Hele Savin, Professor, Aalto University The fundamental concept is to create photodiodes using germanium rather than indium gallium arsenide. While germanium photodiodes are fully compatible with ...

1). These devices contain three light-emitting structures known as quantum wells made of an alloy called indium gallium arsenide, the composition, thickness and strain of which determine the ...

Researchers have developed a photonic switch smaller than a grain of salt that can redirect light signals in trillionths of a ...

The basic idea is to make the photodiodes using germanium instead of indium gallium arsenide. Germanium photodiodes are cheaper and already fully compatible with the semiconductor manufacturing ...

The basic idea is to make the photodiodes using germanium instead of indium gallium arsenide. Germanium photodiodes are cheaper and already fully compatible with the semiconductor manufacturing ...

In today’s rapidly advancing technological landscape, electronic materials are the foundation of countless devices and systems that power our daily lives. From smartphones and laptops to advanced ...

Subscribe for FREE The basic idea is to make the photodiodes using germanium instead of indium gallium arsenide. Germanium photodiodes are cheaper and already fully compatible with the semiconductor ...