Researchers propose 3D semiconductor architectures using 2D semiconductor materials for better performance and scalability ...

Transistors find extensive applications in electronic circuits due to their exceptional ability to amplify or switch signals with minimal power consumption. Furthermore, they can be easily integrated ...

Peking University has published its findings on a wafer-scale 2D GAAFET in Nature, pointing a new path into the Angstrom era ...

EPC launches the EPC2367 100-V GaN FET with an ultra-low on-resistance and higher efficiency for AI servers, robotics, and automotive power.

Transistors provide this isolation ... In optics, however, beam power is obviously affected by loss. Hence, a simple power threshold cannot reliably distinguish between '0' and '1' unless we ...

In a significant advancement for semiconductor technology, ECE's Prof. Kaustav Banerjee , co-authors Arnab Pal & Wei Cao and researchers have unveiled novel three-dimensional (3D) transistors ...

A major breakthrough at Peking University might have just found the first step beyond silicon for semiconductors.

Beyond the power variant, it sometimes seems as though we rarely encounter a discrete transistor these days, such has been the advance of integrated electronics. But they have a rich history ...

To date, commercially available high power GaN transistors generally range from 600 to 650 volts, with the only 900V GaN device available from Transphorm. Transphorm’s core product portfolio is ...