郇宇教授的研究团队在其最新发布的论文中，采用了SiC作为掺杂剂，以优化BCTZ陶瓷的性能。他们发现，SiC具备优异的导热性，可以促进陶瓷烧结过程中的热量传导，从而降低BCTZ陶瓷的烧结温度至1380°C。研究还表明，在高温过程中部分Si离子会扩散进BCTZ的晶格，导致晶体结构的轻微变化，进而增强陶瓷的压电响应。

While market expectations for SiC remain conservative for 2025, prospects appear more promising for 2026. GlobalWafers sees 6-inch SiC substrate prices steady 中文網 ...

RFMW, part of Exponential Technology Group, Inc., a premier distributor of power management and RF and microwave components ...

图7. 转移的LN-SiC堆叠分析，(a) 透射电子显微镜（TEM）和(b) X射线衍射（XRD）分析，显示出优异的薄膜质量。 图8. 制备的毫米波SAW共振器，(a) 光学显微镜图像，以及聚焦于(b) 反射器和(c) 叉指电极的扫描电子显微镜（SEM）图像。 图4(a)和(b)中绘制了相速度和群速度 ...

At close: March 12 at 11:40:16 a.m. EDT Loading Chart for SIC.V ...

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Department of Mechanical Engineering, 271 Applied Science Complex II, Iowa State University, Ames, Iowa 50011, United States ...

Today, inverters for EV powertrains either use IGBTs which are low cost but inefficient at light load conditions, or SiC devices which are very efficient but also expensive. Our new Combo ICeGaN ...

最后，中国率先突破8英寸技术壁垒，不仅标志着我国在超宽禁带半导体领域的技术进步，更为我国氧化镓产业在全球半导体竞争中抢占了先机，有力推动我国在全球半导体竞争格局中占据优势地位。