Anhui Province Key Laboratory of Environment-Friendly Polymer Materials, School of Chemistry & Chemical Engineering, Anhui University, Hefei, Anhui 230601, China ...

A new technical paper titled “SRAM and Mixed-Signal Logic With Noise Immunity in 3nm Nano-Sheet Technology” was published by ...

Department of Materials Science and Chemical Engineering, Hanyang University, Ansan 15588, Republic of Korea ...

Abstract: Nanosheet FETs (NSFETs) are considered promising candidates to replace FinFETs as the dominant devices in sub-5-nm processes. To encourage further research into NSFET-based integrated ...

Abstract: As gate-all-around nanosheet transistors (GAA NSFETs) replacing current FinFETs for their superior gate control capabilities, it needs various performance optimizations for better transistor ...

A transdisciplinary team of AMBER and CRANN researchers from the School of Chemistry at University College Cork (UCC) and the School of Physics at Trinity College Dublin (TCD) has developed sensor ...

It says something about your career at a company that makes hundreds of trillions of transistors every day when your nickname ...

Semiconductor industry fully embraces GAA technology, it paves the way for unprecedented innovation in physical design and manufacturing practices ...

If US President Trump acts upon his promise of 100% tariffs on Taiwanese made chips, global semiconductor supply chain ...

TSMC’s roadmap suggests the chip manufacturing giant will manufacture 4nm chips in Arizona this year, followed by 3nm chips in 2028 using the N2 and A16 nanosheet process technologies.

According to reports, the Giga-Fab, designated as Fab 25, will house six fabs. Industry sources say TSMC has submitted a land ...