A transdisciplinary team of AMBER and CRANN researchers from the School of Chemistry at University College Cork (UCC) and the School of Physics at Trinity College Dublin (TCD) has developed sensor ...

A new technical paper titled “SRAM and Mixed-Signal Logic With Noise Immunity in 3nm Nano-Sheet Technology” was published by researchers at IBM T. J. Watson Research Center and IBM. Abstract “A ...

Researchers have developed a TiO2/MoSe2 heterojunction sensor that can rapidly and sensitively detect sulfur dioxide, crucial for air quality monitoring.

TSMC’s roadmap suggests the chip manufacturing giant will manufacture 4nm chips in Arizona this year, followed by 3nm chips in 2028 using the N2 and A16 nanosheet process technologies.

Abstract: A modular 4.26Mb SRAM based on a 82Kb/block structure with mixed signal logic is fabricated, characterized, and demonstrated with full functionality in a 3nm nanosheet (NS) technology.

IBM and Rapidus presented their research on strategies for selective nanosheet layer reduction – which should help them more consistently construct chips with a 2nm process – at the IEEE International ...

The Key Laboratory of Advanced Textile Materials and Manufacturing Technology of Ministry of Education, National & local joint engineering research center for Textile Fiber Materials and Processing ...

Department of Intelligent Mechatronics Engineering, Sejong University, Seoul 05006, South Korea ...

A new technical paper titled “Novel Trade-offs in 5 nm FinFET SRAM Arrays at Extremely Low Temperatures” was published by ...