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16 天
用SiC掺杂提升BCTZ陶瓷性能:济南大学的最新研究进展
郇宇教授的研究团队在其最新发布的论文中,采用了SiC作为掺杂剂,以优化BCTZ陶瓷的性能。他们发现,SiC具备优异的导热性,可以促进陶瓷烧结过程中的热量传导,从而降低BCTZ陶瓷的烧结温度至1380°C。研究还表明,在高温过程中部分Si离子会扩散进BCTZ的晶格,导致晶体结构的轻微变化,进而增强陶瓷的压电响应。
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