In DRAM chips, besides access transistors, peripheral transistors must meet stringent requirements which preclude a ...

Abstract: Silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) have been widely applied ... behavioral model of the MOSFET is established based on the static ...

Abstract: This chapter contains sections titled: MOSFET Structure, Current-Voltage Characteristics of an nFET, Current-Voltage Characteristics of a pFET, Small-Signal Model at Low Frequencies, ...

A new technical paper titled “Accelerating OTA Circuit Design: Transistor Sizing Based on a Transformer Model and Precomputed Lookup Tables” was published by University Minnesota and Cadence. “Device ...

This project is now read-only. It has been moved over to Codeberg. The development of this project continues at its new home.

Despite the monolithic op amp being older than SPICE simulators, comprehensive op-amp SPICE modeling left a lot to be desired ...

but it’s important to note that any change in the P/N ratio requires complete circuit re-optimization. For best performance and density, both transistor-level topologies and transistor-sizing ...

Discover the possibilities of twisted bilayer graphene as a replacement for silicon in integrated circuits and it's potential.

Ruggedness characteristics of the new gate driver ... Further requirements for such circuits include: Low power dissipation The light must be off when the supply voltage is under the minimum ...

During the past few decades, the evolution of microelectronic components, and particularly field-effect transistors (FETs), has mainly been driven by the innovations ... electrode for a pre-defined ...